Dec 24, 2008· SYSTEMS AND METHODS FOR FORMING ZIRCONIUM AND/OR HAFNIUM ... is an atomic layer deposition ... deposition process. The zirconium, hafnium.
Atomic layer deposition of metal oxynitride layers as gate dielectrics and ... Atomic layer deposition of hafnium ... Atomic layer deposited zirconium ...
... layers provide an insulating layer in a variety of ... to deposit hafnium by atomic layer deposition. ... zirconium oxide atomic layer deposited ...
For example, the dielectric material may contain hafnium oxide, zirconium ... Method for forming gate insulating layer having ... Atomic layer deposition of hafnium ...
The metal compounds have surprisingly and significantly improved uniformity when deposited by atomic layer deposition with cycle times of at least 10 seconds.
The present invention generally is a method for forming a highk dielectric layer, comprising depositing a hafnium compound by atomic layer deposition .
Process for semiconductor device fabrication in which ... and depositing by Atomic Layer Deposition an insulating layer on ... Atomic layer deposited zirconium ...
Jan 27, 2009· Deposition methods for forming silicon oxide layers ... "Atomic Layer Deposition of Hafnium Oxide Thin Films from Tetrakis ... An insulating layer 16, ...
ALD metal oxide deposition process using direct oxidation: ... ALD metal oxide deposition process using direct ... Methods for atomic layer deposition of hafnium ...
Systems and methods for insitu post atomic layer deposition ... Atomic layer deposited zirconium ... oxide and hafnium oxide using atomic layer deposition:
A plurality of cycles of a first atomic layer deposition ... In situ deposition of different metalcontaining films using ... the deposition of zirconium and hafnium ...
A dielectric layer containing an atomic layer deposited insulating metal oxide film having multiple ... and/or aluminum by atomic layer deposition onto a ...
An Overview of Atomic Layer Deposition and its role ... insulating materials like SiO2 cannot ... semiconductor oxide devices are zirconium, hafnium, ...
Genus, Inc. Radicalassisted ... Apparatuses and methods for atomic layer deposition of hafniumcontaining highk ... Insulating film formation method which exhibits ...
In an embodiment, a zirconium silicon oxide film is formed by atomic layer deposition using a zirconium precursor containing silicon and a silicon precursor.
The use of atomic layer deposition ... Genus, Inc. Apparatus and method ... "Atomic Layer Deposition of Insulating Hafnium and Zirconium Nitrides", Chem. Mater. 16, ...
A dielectric film containing HfO 2 /ZrO 2 nanolaminates and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent ...
... layers provide an insulating layer in a variety of ... Atomic layer deposition of zirconiumdoped ... Atomic layer deposition of hafnium lanthanum ...
Dec 16, 2003· Method for forming Lshaped spacers with precise width control ... are formed by atomic layer deposition ... hafnium oxide, and zirconium ...
... includes forming a layer of zirconium oxide by atomic layer deposition. ... for atomic layer deposition of hafniumcontaining high ... an insulating metal oxide ...
Aug 26, 2008· Atomic layer deposition systems and methods including metal betadiketiminate compounds
... a zirconium and/or hafniumcontaining layer on a ... a substrate in a vapor deposition process. The zirconium, hafnium, ... "Atomic layer deposition" ...
A capacitor structure is formed over a semiconductor substrate by atomic layer deposition to achieve ... An insulating layer ... Atomic layer deposited zirconium ...
Atomic layer deposition of metal oxynitride layers as gate dielectrics and ... Atomic layer deposition of hafnium ... Atomic layer deposited zirconium silicon ...